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Product Overview
Digi-Key Part Number TK39J60W5S1VQ-ND
Quantity Available 318
Can ship immediately
Manufacturer

Manufacturer Part Number

TK39J60W5,S1VQ

Description MOSFET N CH 600V 38.8A TO-3P(N)
Expanded Description N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks
Documents & Media
Datasheets TK39J60W5
Featured Product DTMOSIV Superjunction MOSFETs
Product Attributes Select All
Categories
Manufacturer

Toshiba Semiconductor and Storage

Series DTMOSIV
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
Vgs (Max) ±30V
FET Feature Super Junction
Power Dissipation (Max) 270W (Tc)
Rds On (Max) @ Id, Vgs 65 mOhm @ 19.4A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3
 
Additional Resources
Standard Package ? 25
Other Names TK39J60W5,S1VQ(O
TK39J60W5S1VQ

23:49:17 3-27-2017

Price & Procurement
 

Quantity
All prices are in DKK.
Price Break Unit Price Extended Price
1 81,20000 81,20
10 73,09400 730,94
25 66,59800 1.664,95
100 60,10130 6.010,13
250 55,22804 13.807,01
500 50,35492 25.177,46

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