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Product Overview
Digi-Key Part Number SCT2H12NZGC11-ND
Quantity Available 17
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 1700V 3.7A
Expanded Description N-Channel 1700V (1.7kV) 3.7A (Tc) 35W (Tc) Through Hole TO-3PFM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Documents & Media
Datasheets SCT2H12NZ
Product Training Modules SiC MOSFETs
Featured Product BD768xFJ-LB Quasi-Resonant Controllers Designed To Drive SCT2H12NZ SiC MOSFETs
Product Attributes Select All

Rohm Semiconductor

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V
Vgs (Max) +22V, -6V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1.1A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PFM
Package / Case TO-3PFM, SC-93-3
For Use With
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Additional Resources
Standard Package ? 450

18:12:02 3-30-2017

Price & Procurement

All prices are in DKK.
Price Break Unit Price Extended Price
1 45,92000 45,92
10 41,34200 413,42
25 37,66840 941,71
100 33,99410 3.399,41
250 31,23764 7.809,41
500 28,48132 14.240,66
1.000 24,80625 24.806,25

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