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Product Overview
Digi-Key Part Number IPP60R299CPXKSA1-ND
Quantity Available 6.460
Can ship immediately
Manufacturer

Manufacturer Part Number

IPP60R299CPXKSA1

Description MOSFET N-CH 650V 11A TO-220
Expanded Description N-Channel 650V 11A (Tc) 96W (Tc) Through Hole PG-TO-220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Documents & Media
Datasheets IPP60R299CP
Product Training Modules CoolMOS™ CP High Voltage MOSFETs Converters
Featured Product Data Processing Systems
PCN Design/Specification Wafer Dia/Halogen free mold Chg 2/Mar/2016
Catalog Page 1357 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Rds On (Max) @ Id, Vgs 299 mOhm @ 6.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 500
Other Names IPP60R299CP
IPP60R299CPAKSA1
IPP60R299CPIN
IPP60R299CPIN-ND
IPP60R299CPX
IPP60R299CPXK
IPP60R299CPXTIN
IPP60R299CPXTIN-ND
SP000084280

17:05:18 2-25-2017

Price & Procurement
 

Quantity
All prices are in DKK.
Price Break Unit Price Extended Price
1 19,74000 19,74
10 17,74500 177,45
100 14,26320 1.426,32
500 11,71842 5.859,21
1.000 9,70949 9.709,49

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